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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS(on)=2
ZVN2106G
D
S COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP2106G ZVN2106 G D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 710 8 20 2.0 -55 to +150 UNIT V mA A V W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. MAX. UNIT CONDITIONS. BV DSS V GS(th) I GSS I DSS 60 0.8 2.4 20 500 100 2 2 300 75 45 20 7 8 12 15 V V nA nA A A mS pF pF pF ns ns ns ns V DD 18V, I D=1A V DS=18 V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125C(2) V DS=18V, V GS=10V V GS=10V,I D=1A V DS=18V,I D=1A
On-State Drain Current (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) ReverseTransfer Capacitance(2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3)
I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device
3 - 385
ZVN2106G
TYPICAL CHARACTERISTICS
ID(On) -On-State Drain Current (Amps)
4 VDD= 20V 30V 50V ID=3A
VGS-Gate Source Voltage (Volts)
VGS= 10V 9V 8V 7V
16 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5
3
2
6V 5V 4V
1
0 0 1 2 3 4 5
3V
2.0
2.5
3.0
VDS - Drain Source Voltage (Volts)
Q-Charge (nC)
Saturation Characteristics
RDS(ON) -Drain Source On-Resistance ()
Gate charge v gate-source voltage
100 80
10
C-Capacitance (pF)
60 Ciss 40
1
ID= 1A 0.5A 0.25A
20
Coss Crss 0 10 20 30 40 50
0.1 1 10 20
VDS-Drain Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Capacitance v drain-source voltage
On-resistance v gate-source voltage
2.4
0.7
Normalised RDS(on) and VGS(th)
gfs-Transconductance (S)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20
Gate Thresh old
D
in ra
ou -S
rc
e
sis Re
n ta
ce
) on S( RD
0.6 0.5 0.4 0.3 0.2 0.1 0 VDS=10V
VGS=10V ID=1A VGS=VDS ID=1mA
Voltage VGS
(th)
0 20 40 60 80 100 120 140 160
0
1
2
3
4
5
Tj-Junction Temperature (C)
ID- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
Transconductance v drain current
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